weitron http://www.weitron.com.tw drain current -5.3 amperes drain source voltage - 30 voltage featu r es: applications: * power management in notebook computer * portable equipment * battery powered system * super high dense cell design for low r ds (on) r ds (on) < 100m @ vgs = -4.5v * rugged and reliable * simple drive requirement * sot-23 package maximum ratings (t a rating symbol value unit drain-source voltage v ds -30 v v gate-source voltage v gs 20 continuous drain current -5.3 i d pulsed drain current 1 i dm -20 a a total power dissipation (t a =25c) p d 2.5 1.2 w maximum junction-case r jc 24 ambient temperature t a t c +150 +150 device marking wtc9435 = p94 wtc9435 p-channel enhancement mode power mosfet 1 2 3 g a te source drain so t -23 1 2 3 rev.a 29-mar-10 1/4 lea d( p b) - f r ee p b case temperature operating junction temperature range storage temperature range note: 1. repetitive rating: pulse width limited by the maximum junction temperature 2. 1-in2 2oz cu pcb board 3. guaranteed by design; not subject to production testing (t a =75c) c/w maximum junction-ambient 2 r ja 62.5 c/w c c t j t stg +150 -55~+150 c c
input c apacitanc e v ds =-15v , v gs =0v , f=1mhz output c apacitanc e v ds =-15v , v gs =0v , f=1mhz r e v erse t r ansf er c apacitanc e v ds =-15v , v gs =0v , f=1mhz t otal g a t e c har ge (2) d r ain-s our c e b r eakdo wn v oltage v gs =0v , i d =-250a g a t e-s our c e t hr eshold v oltage v ds =v gs , i d =-250a g a t e-s our c e l eak age c ur r en t v ds =0v , v gs = 20v d r ain-s our c e on-r esistanc e v gs =-4.5v , i d =-4.2a f or w ar d t r ansc onduc tanc e v ds =-10v, i d =-5.3a static dynamic switching v (br)dss v gs (th) r ds( on ) v sd i gss i dss g f s c iss c oss c rss t d ( on ) t ) qg qgs qgd -30 - v -1.0 -1.7 -3.0 v - - - - - -1 100 na m a s 70 50 100 70 745 440 120 f p 9 75 40 28 3 7 - -1.3 ns ns ns ns nc nc nc v - 15 - z er o g a t e v oltage d r ain c ur r en t v ds =-24v , v gs =0v - - - 10 - - - - - - - - - - - - - - - - - - - - t ur n-on d ela y t ime (2) t ur n-o t ime + + - - rise time t t fall time f r notes: v gs =-10v , i d =-5.3a g a t e-s our c e c har ge g a t e-d r ain c har ge d r ain-s our c e d io de f or w ar d v oltage (2) v gs =0v , i s =-2.6a i s - -2.6 a - continuous source current (body diode) 1. pulse width limited by max. junction temperature. 2. pulse width 300s, duty cycle 2%. 3. surface mounted on 1 in 2 copper pad of fr4 board; 125c/w when mounted on min. copper pad. v dd =-15v, i d =-1a, v gen =-10v, r g =6 , r l =15 v dd =-15v, i d =-1a, v gen =-10v, r g =6 , r l =15 v dd =-15v, i d =-1a, v gen =-10v, r g =6 , r l =15 v dd =-15v, i d =-1a, v gen =-10v, r g =6 , r l =15 v ds =-15v, i d =-5.3a,v gs =-10v v ds =-15v, i d =-5.3a,v gs =-10v v ds =-15v, i d =-5.3a,v gs =-10v wtc9435 electrical characteristics (ta=25c unless otherwise specified) characteristic symbol min typ max unit weitron http://www.weitron.com.tw 2/4 rev.a 29-mar-10
weitron http://ww w .weit r on.com.tw wtc9435 3/4 rev.a 29-mar-10 t y pi c a l e le c t r i c a l char a c te r i s ti c s
weitron http://ww w .weit r on.com.tw wtc9435 dim a b c d e g h j k l m min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 a b d e g m l h j t o p view k c so t -23 so t -23 outline dimension 4/4 rev.a 29-mar-10
|
